Aluminum nitride
Synonym(s):AL526020;Aluminum mononitride
- CAS NO.:24304-00-5
- Empirical Formula: AlN
- Molecular Weight: 40.99
- MDL number: MFCD00003429
- EINECS: 246-140-8
- SAFETY DATA SHEET (SDS)
- Update Date: 2024-05-21 17:15:21
What is Aluminum nitride?
Chemical properties
Crystalline solid.
Physical properties
Insulator (Eg =4.26 eV). Decomposes with water, acids, and alkalis to Al(OH)3 and NH3. Crucible container for GaAs crystal growth
Characteristics
Aluminum nitride is an excellent substrate for creating wide-band-gap semiconductors for wireless communications and power-industry applications. Since aluminum nitride withstands very high temperatures, this substrate material can be used for microelectronic devices on jet engines. Such substrates also would improve the production of blue and ultraviolet lasers that could be used to squeeze a full-length movie onto a CD. Aluminum nitride crystals have also been grown in a tungsten crucible at 2300°C.
The Uses of Aluminum nitride
Aluminum nitride possesses very high thermal conductivity and effectively used in the ceramic industry. It finds application in deep ultraviolet optoelectronics, steel production, dielectric layers in optical storage media, chip carriers and as a crucible to grow crystals of gallium arsenide. It is also used as a radio frequency filter, which finds application in mobile phones. Further, it is used as a circuit carrier in semiconductors. In addition to this, it is used as a heat-sink in light-emitting diode lighting technology.
The Uses of Aluminum nitride
In semiconductor electronics; in steel manufacture. AlN components and substrates are used in electrical engines, microelectronics, naval radio and defense systems, railway transport systems, telecommunications and research satellites, and emission control systems.
The Uses of Aluminum nitride
Aluminum nitride is a refractory ceramic that is used as an electrically insulating material in applications similar to aluminum oxide. AlN is also used in optical and semiconductor devices with GaN to produce LEDs on sapphire and in piezoelectric MEMS devices.
Preparation
Aluminum nitride is conveniently prepared by an electric arc between aluminum electrodes in a nitrogen atmosphere. Crucibles of the pressed powder, sintered at 1985°C, are resistant to liquid aluminum at 1985°C, to liquid gallium at 1316°C, and to liquid boron oxide at 1093°C. Aluminum nitride has good thermal shock resistance and is only slowly oxidized in air (1.3% converted to Al2O3 in 30 h at 1427°C). It is inert to hydrogen at 1705°C but is attacked by chlorine at 593°C.
Definition
ChEBI: Aluminium nitride is a nitride.
Flammability and Explosibility
Non flammable
Industrial uses
Aluminum nitride is an excellent substrate for creating wide-band-gap semiconductors for wireless communications and power-industry applications. Since aluminum nitride withstands very high temperatures, this substrate material can be used for microelectronic devices on jet engines. Such substrates also would improve the production of blue and ultraviolet lasers that could be used to squeeze a full-length movie onto a CD. Aluminum nitride crystals have also been grown in a tungsten crucible at 2300 C.
Materials Uses
Aluminum nitride (AlN) has an unusual combination of properties: it is an electrical insulator, but an excellent conductor of heat. This is just what is wanted for substrates for high-powered electronics; the substrate must insulate yet conduct the heat out of the microchips. This, and its high strength, chemical stability, and low expansion give it a special role as a heat sinks for power electronics. Aluminum nitride starts as a powder, is pressed (with a polymer binder) to the desired shape, then fired at a high temperature, burning off the binder and causing the powder to sinter.
Aluminum nitride is particularly unusual for its high thermal conductivity combined with a high electrical resistance, low dielectric constant, good corrosion, and thermal shock resistance.
Typical uses. Substrates for microcircuits, chip carriers, heat sinks, electronic components; windows, heaters, chucks, clamp rings, gas distribution plates.
Properties of Aluminum nitride
Melting point: | >2200 °C (lit.) |
Density | 3.26 g/mL at 25 °C (lit.) |
vapor pressure | 0Pa at 25℃ |
RTECS | BD1055000 |
solubility | Soluble in mineral acids. |
form | powder |
Specific Gravity | 3.26 |
color | White to pale yellow |
Resistivity | 10*17 (ρ/μΩ.cm) |
Water Solubility | MAY DECOMPOSE |
Sensitive | Moisture Sensitive |
Crystal Structure | Hexagonal, Wurtzite (Zincite) Structure - Space Group P 63mc |
Merck | 14,353 |
Stability: | Stable. |
CAS DataBase Reference | 24304-00-5(CAS DataBase Reference) |
NIST Chemistry Reference | Aluminum nitride(24304-00-5) |
EPA Substance Registry System | Aluminum nitride (AlN) (24304-00-5) |
Safety information for Aluminum nitride
Signal word | Danger |
Pictogram(s) |
Health Hazard GHS08 Environment GHS09 |
GHS Hazard Statements |
H372:Specific target organ toxicity, repeated exposure H410:Hazardous to the aquatic environment, long-term hazard |
Precautionary Statement Codes |
P260:Do not breathe dust/fume/gas/mist/vapours/spray. P264:Wash hands thoroughly after handling. P264:Wash skin thouroughly after handling. P270:Do not eat, drink or smoke when using this product. P273:Avoid release to the environment. P314:Get medical advice/attention if you feel unwell. P391:Collect spillage. Hazardous to the aquatic environment |
Computed Descriptors for Aluminum nitride
InChIKey | PIGFYZPCRLYGLF-UHFFFAOYSA-N |
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