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HomecompanySilicon(IV) oxide sputtering target, 50.8mm (2.0 in.) dia. x 6.35mm (0.250 in.) thick CAS
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Silicon(IV) oxide sputtering target, 50.8mm (2.0 in.) dia. x 6.35mm (0.250 in.) thick CAS

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  • Time:2024-08-20

Product Details

  • Product NameSilicon(IV) oxide sputtering target, 50.8mm (2.0 in.) dia. x 6.35mm (0.250 in.) thick
  • EINECS No.272-697-1
  • MFC6H19NO2Si3
  • MW221.48
  • Appearancetablets (~0.5 g each)White with some blue indicating granules
  • storage temp. 2-8°C
  • Boiling point >100 °C(lit.)
  • Melting point 1610 °C(lit.)
  • density 2.6 g/mL at 25 °C(lit.)

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